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IPI80P04P4L04AKSA1 - TO-262-3

IPI80P04P4L04AKSA1

Obsolete
Infineon Technologies

MOSFET P-CH 40V 80A TO262-3

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IPI80P04P4L04AKSA1 - TO-262-3

IPI80P04P4L04AKSA1

Obsolete
Infineon Technologies

MOSFET P-CH 40V 80A TO262-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI80P04P4L04AKSA1
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]176 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)125 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]5 V
Vgs (Max) [Min]-16 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPI80P Series

P-Channel 40 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3-1

Documents

Technical documentation and resources