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IPI80P03P4L07AKSA1 - TO-262-3

IPI80P03P4L07AKSA1

Obsolete
Infineon Technologies

MOSFET P-CH 30V 80A TO262-3

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IPI80P03P4L07AKSA1 - TO-262-3

IPI80P03P4L07AKSA1

Obsolete
Infineon Technologies

MOSFET P-CH 30V 80A TO262-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI80P03P4L07AKSA1
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC
Input Capacitance (Ciss) (Max) @ Vds5700 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]88 W
Rds On (Max) @ Id, Vgs7.2 mOhm
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]5 V
Vgs (Max) [Min]-16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPI80P Series

P-Channel 30 V 80A (Tc) 88W (Tc) Through Hole PG-TO262-3

Documents

Technical documentation and resources