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IRF100P219XKMA1 - IRFP4368PBFXKMA1

IRF100P219XKMA1

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-247 PACKAGE; 1.7 MOHM;

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IRF100P219XKMA1 - IRFP4368PBFXKMA1

IRF100P219XKMA1

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-247 PACKAGE; 1.7 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF100P219XKMA1
Current - Continuous Drain (Id) @ 25°C203 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs270 nC
Input Capacitance (Ciss) (Max) @ Vds12020 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)341 W
Rds On (Max) @ Id, Vgs1.7 mOhm
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRF100 Series

N-Channel 100 V 203A (Tc) 341W (Tc) Through Hole TO-247AC

Documents

Technical documentation and resources