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IRF100S201 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF100S201

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 4.2 MOHM;

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Search across all available documentation for this part.

DocumentsIR Part Numbering SystemDatasheet+1
IRF100S201 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF100S201

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 4.2 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering SystemDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF100S201
Current - Continuous Drain (Id) @ 25°C192 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs255 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]9500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)441 W
Rds On (Max) @ Id, Vgs4.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 800$ 1.67
DigikeyCut Tape (CT) 1$ 4.51
10$ 2.98
100$ 2.11
Digi-Reel® 1$ 4.51
10$ 2.98
100$ 2.11
Tape & Reel (TR) 800$ 1.66
1600$ 1.64
NewarkEach (Supplied on Cut Tape) 1$ 3.98
10$ 2.78
25$ 2.65
50$ 2.41
100$ 2.17
250$ 2.02
500$ 1.86
1000$ 1.71

Description

General part information

IRF100 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.