IRF100 Series

Catalog

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 4.2 MOHM;

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IRF100S201	100 V	192 A	441 W	9500 pF	MOSFET (Metal Oxide)	20 V	Surface Mount	N-Channel	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	4.2 mOhm	4 V	255 nC
Infineon Technologies IRF100P219XKMA1	100 V	203 A	341 W		MOSFET (Metal Oxide)	20 V	Through Hole	N-Channel	6 V 10 V	TO-247-3	-55 °C	175 ░C	1.7 mOhm	3.8 V	270 nC	TO-247AC	12020 pF
Infineon Technologies IRF100P218XKMA1	100 V	209 A			MOSFET (Metal Oxide)	20 V	Through Hole	N-Channel	6 V 10 V	TO-247-3	-55 °C	175 ░C		3.8 V		TO-247AC	25000 pF	1.28 mOhm	556 W	555 nC