IRF100P218XKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	IRF100P218XKMA1

Current - Continuous Drain (Id) @ 25°C	209 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	555 nC
Input Capacitance (Ciss) (Max) @ Vds	25000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	556 W
Rds On (Max) @ Id, Vgs [Max]	1.28 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IRF100S201	100 V	192 A	441 W	9500 pF	MOSFET (Metal Oxide)	20 V	Surface Mount	N-Channel	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	4.2 mOhm	4 V	255 nC
Infineon Technologies IRF100P219XKMA1	100 V	203 A	341 W		MOSFET (Metal Oxide)	20 V	Through Hole	N-Channel	6 V 10 V	TO-247-3	-55 °C	175 ░C	1.7 mOhm	3.8 V	270 nC	TO-247AC	12020 pF
Infineon Technologies IRF100P218XKMA1	100 V	209 A			MOSFET (Metal Oxide)	20 V	Through Hole	N-Channel	6 V 10 V	TO-247-3	-55 °C	175 ░C		3.8 V		TO-247AC	25000 pF	1.28 mOhm	556 W	555 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$