IR2117SPBF

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Infineon Technologies

EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SINGLE INPUT

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IR2117SPBF

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Infineon Technologies

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2117SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2117 Series

Part	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Channel Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Package / Case	Package / Case [y]	Package / Case [x]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
Infineon Technologies IR2117STR	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA
Infineon Technologies IR2117PBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117SPBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA
Infineon Technologies IR2117PBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117STRPBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.52
		10	$ 1.37
		95	$ 1.10
		285	$ 1.03
		570	$ 0.91
Newark	Each	1	$ 1.65
		10	$ 1.22
		100	$ 1.03
		500	$ 0.98
		1000	$ 0.95
		2500	$ 0.94
		7600	$ 0.94

Description

General part information

IR2117 Series

The IR2117SPBF is a single-channel Power MOSFET and IGBT Driver features proprietary HVIC and latch immune CMOS technologies enables ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 600V.

Documents

Technical documentation and resources

Application Note EN

Datasheet