IR2117
ObsoleteInfineon Technologies
IC GATE DRVR HIGH-SIDE 8DIP
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IR2117
ObsoleteInfineon Technologies
IC GATE DRVR HIGH-SIDE 8DIP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IR2117 |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) [custom] | 500 mA |
| Current - Peak Output (Source, Sink) [custom] | 250 mA |
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [Max] | 9.5 V |
| Logic Voltage - VIL, VIH [Min] | 6 V |
| Mounting Type | Through Hole |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.3 in |
| Package / Case | 8-DIP |
| Package / Case | 7.62 mm |
| Rise / Fall Time (Typ) [custom] | 80 ns |
| Rise / Fall Time (Typ) [custom] | 40 ns |
| Supplier Device Package | 8-PDIP |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
IR2117 Series
| Part | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Gate Type | Channel Type | Number of Drivers | Voltage - Supply [Max] | Voltage - Supply [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Input Type | Package / Case | Package / Case [y] | Package / Case [x] | Logic Voltage - VIL, VIH [Max] | Logic Voltage - VIL, VIH [Min] | Supplier Device Package | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | High-Side | 80 ns | 40 ns | IGBT N-Channel MOSFET | Single | 1 | 20 V | 10 VDC | 150 °C | -40 °C | Non-Inverting | 8-SOIC | 3.9 mm | 0.154 in | 9.5 V | 6 V | 8-SOIC | 600 V | Surface Mount | 500 mA | 250 mA | ||
Infineon Technologies | High-Side | 80 ns | 40 ns | IGBT N-Channel MOSFET | Single | 1 | 20 V | 10 VDC | 150 °C | -40 °C | Non-Inverting | 8-DIP | 9.5 V | 6 V | 8-PDIP | 600 V | Through Hole | 500 mA | 250 mA | 0.3 in | 7.62 mm | ||
Infineon Technologies | High-Side | 80 ns | 40 ns | IGBT N-Channel MOSFET | Single | 1 | 20 V | 10 VDC | 150 °C | -40 °C | Non-Inverting | 8-DIP | 9.5 V | 6 V | 8-PDIP | 600 V | Through Hole | 500 mA | 250 mA | 0.3 in | 7.62 mm | ||
Infineon Technologies | High-Side | 80 ns | 40 ns | IGBT N-Channel MOSFET | Single | 1 | 20 V | 10 VDC | 150 °C | -40 °C | Non-Inverting | 8-SOIC | 3.9 mm | 0.154 in | 9.5 V | 6 V | 8-SOIC | 600 V | Surface Mount | 500 mA | 250 mA | ||
Infineon Technologies | High-Side | 80 ns | 40 ns | IGBT N-Channel MOSFET | Single | 1 | 20 V | 10 VDC | 150 °C | -40 °C | Non-Inverting | 8-DIP | 9.5 V | 6 V | 8-PDIP | 600 V | Through Hole | 500 mA | 250 mA | 0.3 in | 7.62 mm | ||
Infineon Technologies | High-Side | 80 ns | 40 ns | IGBT N-Channel MOSFET | Single | 1 | 20 V | 10 VDC | 150 °C | -40 °C | Non-Inverting | 8-SOIC | 3.9 mm | 0.154 in | 9.5 V | 6 V | 8-SOIC | 600 V | Surface Mount | 500 mA | 250 mA |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IR2117 Series
High-Side Gate Driver IC Non-Inverting 8-PDIP
Documents
Technical documentation and resources