IR2117 Series

Catalog

IC GATE DRVR HIGH-SIDE 8SOIC

Part	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Channel Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Package / Case	Package / Case [y]	Package / Case [x]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
Infineon Technologies IR2117STR	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA
Infineon Technologies IR2117PBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117SPBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA
Infineon Technologies IR2117PBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117STRPBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA