IR2117PBF

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Infineon Technologies

DRIVER 600V 1-OUT HIGH SIDE/LOW SIDE NON-INV 8-PIN PDIP TUBE

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IR2117PBF

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Infineon Technologies

DRIVER 600V 1-OUT HIGH SIDE/LOW SIDE NON-INV 8-PIN PDIP TUBE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2117PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2117 Series

Part	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Channel Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Package / Case	Package / Case [y]	Package / Case [x]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
Infineon Technologies IR2117STR	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA
Infineon Technologies IR2117PBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117SPBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA
Infineon Technologies IR2117PBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-DIP			9.5 V	6 V	8-PDIP	600 V	Through Hole	500 mA	250 mA	0.3 in	7.62 mm
Infineon Technologies IR2117STRPBF	High-Side	80 ns	40 ns	IGBT N-Channel MOSFET	Single	1	20 V	10 VDC	150 °C	-40 °C	Non-Inverting	8-SOIC	3.9 mm	0.154 in	9.5 V	6 V	8-SOIC	600 V	Surface Mount	500 mA	250 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.00
		10	$ 1.67
		25	$ 1.66
		50	$ 1.64
		100	$ 1.61
		250	$ 1.60
		500	$ 1.54
Digikey	Bulk	158	$ 1.90
		158	$ 1.90
	Tube	1	$ 3.52
		1	$ 3.52
		10	$ 3.16
		10	$ 3.16
		50	$ 2.99
		50	$ 2.99
		100	$ 2.59
		100	$ 2.59
		250	$ 2.46
		250	$ 2.46
		500	$ 2.20
		500	$ 2.20
		1000	$ 1.86
		1000	$ 1.86
		2500	$ 1.77
		2500	$ 1.77
		5000	$ 1.70
		5000	$ 1.70

Description

General part information

IR2117 Series

High-Side Gate Driver IC Non-Inverting 8-PDIP

Documents

Technical documentation and resources