
DMTH6010LPSQ-13
ActiveDiodes Inc
MOSFET, N-CH, 60V, 100A, POWERDI 5060 ROHS COMPLIANT: YES
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DMTH6010LPSQ-13
ActiveDiodes Inc
MOSFET, N-CH, 60V, 100A, POWERDI 5060 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH6010LPSQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13.5 A, 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2090 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.6 W, 136 W |
| Rds On (Max) @ Id, Vgs | 8 mOhm |
| Supplier Device Package | PowerDI5060-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMTH6010LPSQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.
Documents
Technical documentation and resources