DMTH6010SK3-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 16.3A I(D), 60V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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DMTH6010SK3-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 16.3A I(D), 60V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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Technical Specifications

Parameters and characteristics for this part

Specification	DMTH6010SK3-13

Current - Continuous Drain (Id) @ 25°C	16.3 A, 70 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

DMTH6010LPSQ Series

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Grade	Power - Max [Max]	Qualification
Diodes Inc DMTH6010SPS-13	Surface Mount	8-PowerTDFN	13.5 A 100 A	PowerDI5060-8	167 W	2.6 W	MOSFET (Metal Oxide)	38.1 nC	8 mOhm	N-Channel	10 V	60 V	4 V	2841 pF	-55 °C	175 ░C	20 V
Diodes Inc DMTH6010LK3-13	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	14.8 A 70 A	TO-252-3		3.1 W	MOSFET (Metal Oxide)		8 mOhm	N-Channel	4.5 V 10 V	60 V	3 V	2090 pF	-55 °C	175 ░C	20 V	41.3 nC
Diodes Inc DMTH6010LPD-13	Surface Mount	8-PowerTDFN	13.1 A 47.6 A	PowerDI5060-8			MOSFET (Metal Oxide)	40.2 nC	11 mOhm			60 V	3 V	2615 pF	-55 °C	175 ░C			2 N-Channel (Dual)	Automotive	2.8 W	AEC-Q101
Diodes Inc DMTH6010SK3-13	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.3 A 70 A	TO-252-3		3.1 W	MOSFET (Metal Oxide)		8 mOhm	N-Channel	10 V	60 V	4 V	1940 pF	-55 °C	175 ░C	20 V	36.3 nC
Diodes Inc DMTH6010LPSQ-13	Surface Mount	8-PowerTDFN	13.5 A 100 A	PowerDI5060-8		2.6 W 136 W	MOSFET (Metal Oxide)		8 mOhm	N-Channel	4.5 V 10 V	60 V	3 V	2090 pF	-55 °C	175 ░C	20 V	41.3 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.09
		10	$ 0.89
		100	$ 0.69
		500	$ 0.59
		1000	$ 0.48
	Digi-Reel®	1	$ 1.09
		10	$ 0.89
		100	$ 0.69
		500	$ 0.59
		1000	$ 0.48
	Tape & Reel (TR)	2500	$ 0.42

Description

General part information

DMTH6010LPSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.

DMTH6010SK3-13

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DMTH6010SK3-13

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Technical Specifications

DMTH6010LPSQ Series

Pricing

Description

DMTH6010LPSQ Series

Documents

Datasheet

Datasheet

Recommended Soldering Techniques

DMTH6010LPSQ Series