DMTH6010LPSQ Series

60V 175°C N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Grade	Power - Max [Max]	Qualification
Diodes Inc DMTH6010SPS-13	Surface Mount	8-PowerTDFN	13.5 A 100 A	PowerDI5060-8	167 W	2.6 W	MOSFET (Metal Oxide)	38.1 nC	8 mOhm	N-Channel	10 V	60 V	4 V	2841 pF	-55 °C	175 ░C	20 V
Diodes Inc DMTH6010LK3-13	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	14.8 A 70 A	TO-252-3		3.1 W	MOSFET (Metal Oxide)		8 mOhm	N-Channel	4.5 V 10 V	60 V	3 V	2090 pF	-55 °C	175 ░C	20 V	41.3 nC
Diodes Inc DMTH6010LPD-13	Surface Mount	8-PowerTDFN	13.1 A 47.6 A	PowerDI5060-8			MOSFET (Metal Oxide)	40.2 nC	11 mOhm			60 V	3 V	2615 pF	-55 °C	175 ░C			2 N-Channel (Dual)	Automotive	2.8 W	AEC-Q101
Diodes Inc DMTH6010SK3-13	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.3 A 70 A	TO-252-3		3.1 W	MOSFET (Metal Oxide)		8 mOhm	N-Channel	10 V	60 V	4 V	1940 pF	-55 °C	175 ░C	20 V	36.3 nC
Diodes Inc DMTH6010LPSQ-13	Surface Mount	8-PowerTDFN	13.5 A 100 A	PowerDI5060-8		2.6 W 136 W	MOSFET (Metal Oxide)		8 mOhm	N-Channel	4.5 V 10 V	60 V	3 V	2090 pF	-55 °C	175 ░C	20 V	41.3 nC

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.