DMTH6010LK3-13
ActiveDiodes Inc
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH6010LK3-13
ActiveDiodes Inc
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH6010LK3-13
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH6010LK3-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 14.8 A |
| Current - Continuous Drain (Id) (Tc) | 70 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 41.3 nC |
| Input Capacitance (Ciss) (Max) | 2090 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252-3 |
| Power Dissipation (Max) | 3.1 W |
| Rds On (Max) | 8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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