IPDD60R125G7XTMA1

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Infineon Technologies

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

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DocumentsTechnical Data Sheet EN

IPDD60R125G7XTMA1

Active

Infineon Technologies

COOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPDD60R125G7XTMA1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-PowerSOP Module
Power Dissipation (Max)	120 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-HDSOP-10-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPDD60 Series

Part	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPDD60R075CFD7XTMA1	10-PowerSOP Module	20 V	2102 pF	MOSFET (Metal Oxide)	266 W	Surface Mount	51 nC	N-Channel	75 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V
Infineon Technologies IPDD60R170CFD7XTMA1	10-PowerSOP Module	20 V	1016 pF	MOSFET (Metal Oxide)	137 W	Surface Mount		N-Channel		4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	23 nC	19 A
Infineon Technologies IPDD60R145CFD7XTMA1	10-PowerSOP Module	20 V	1199 pF	MOSFET (Metal Oxide)		Surface Mount	28 nC	N-Channel	145 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		24 A
Infineon Technologies IPDD60R055CFD7XTMA1	10-PowerSOP Module	20 V	2724 pF	MOSFET (Metal Oxide)	329 W	Surface Mount		N-Channel	55 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		52 A
Infineon Technologies IPDD60R150G7XTMA1	10-PowerSOP Module	20 V	902 pF	MOSFET (Metal Oxide)		Surface Mount		N-Channel		4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	23 nC	16 A	95 W	10 V	150 mOhm
Infineon Technologies IPDD60R050G7XTMA1	10-PowerSOP Module	20 V	2670 pF	MOSFET (Metal Oxide)	278 W	Surface Mount	68 nC	N-Channel	50 mOhm	4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		47 A		10 V
Infineon Technologies IPDD60R045CFD7XTMA1	10-PowerSOP Module	20 V		MOSFET (Metal Oxide)	379 W	Surface Mount		N-Channel	45 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	79 nC	61 A
Infineon Technologies IPDD60R102G7XTMA1	10-PowerSOP Module	20 V	1320 pF	MOSFET (Metal Oxide)		Surface Mount		N-Channel		4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	34 nC	23 A	139 W	10 V	102 mOhm
Infineon Technologies IPDD60R125G7XTMA1	10-PowerSOP Module	20 V	1080 pF	MOSFET (Metal Oxide)	120 W	Surface Mount	27 nC	N-Channel	125 mOhm	4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		20 A		10 V
Infineon Technologies IPDD60R090CFD7XTMA1	10-PowerSOP Module	20 V	1747 pF	MOSFET (Metal Oxide)		Surface Mount		N-Channel	90 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	42 nC	33 A	227 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.81
		10	$ 3.19
		100	$ 2.27
		500	$ 1.88
	Digi-Reel®	1	$ 4.81
		10	$ 3.19
		100	$ 2.27
		500	$ 1.88
	Tape & Reel (TR)	1700	$ 1.80
Newark	Each (Supplied on Cut Tape)	1	$ 3.32
		10	$ 2.54
		25	$ 2.38
		50	$ 2.24
		100	$ 2.08
		250	$ 1.97
		500	$ 1.86

Description

General part information

IPDD60 Series

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology600 V CoolMOS™ G7 superjunction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet