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IPDD60R045CFD7XTMA1 - INFINEON IPDD60R075CFD7XTMA1

IPDD60R045CFD7XTMA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 45 MOHM;

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IPDD60R045CFD7XTMA1 - INFINEON IPDD60R075CFD7XTMA1

IPDD60R045CFD7XTMA1

Active
Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 45 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPDD60R045CFD7XTMA1
Current - Continuous Drain (Id) @ 25°C61 A
Drain to Source Voltage (Vdss)600 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case10-PowerSOP Module
Power Dissipation (Max)379 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackagePG-HDSOP-10-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

IPDD60 Series

PartPackage / CaseVgs (Max)Input Capacitance (Ciss) (Max) @ VdsTechnologyPower Dissipation (Max)Mounting TypeGate Charge (Qg) (Max) @ Vgs [Max]FET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdOperating Temperature [Min]Operating Temperature [Max]Supplier Device PackageDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°CPower Dissipation (Max) [Max]Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies
10-PowerSOP Module
20 V
2102 pF
MOSFET (Metal Oxide)
266 W
Surface Mount
51 nC
N-Channel
75 mOhm
4.5 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
Infineon Technologies
10-PowerSOP Module
20 V
1016 pF
MOSFET (Metal Oxide)
137 W
Surface Mount
N-Channel
4.5 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
23 nC
19 A
Infineon Technologies
10-PowerSOP Module
20 V
1199 pF
MOSFET (Metal Oxide)
Surface Mount
28 nC
N-Channel
145 mOhm
4.5 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
24 A
Infineon Technologies
10-PowerSOP Module
20 V
2724 pF
MOSFET (Metal Oxide)
329 W
Surface Mount
N-Channel
55 mOhm
4.5 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
52 A
Infineon Technologies
10-PowerSOP Module
20 V
902 pF
MOSFET (Metal Oxide)
Surface Mount
N-Channel
4 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
23 nC
16 A
95 W
10 V
150 mOhm
Infineon Technologies
10-PowerSOP Module
20 V
2670 pF
MOSFET (Metal Oxide)
278 W
Surface Mount
68 nC
N-Channel
50 mOhm
4 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
47 A
10 V
Infineon Technologies
10-PowerSOP Module
20 V
MOSFET (Metal Oxide)
379 W
Surface Mount
N-Channel
45 mOhm
4.5 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
79 nC
61 A
Infineon Technologies
10-PowerSOP Module
20 V
1320 pF
MOSFET (Metal Oxide)
Surface Mount
N-Channel
4 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
34 nC
23 A
139 W
10 V
102 mOhm
Infineon Technologies
10-PowerSOP Module
20 V
1080 pF
MOSFET (Metal Oxide)
120 W
Surface Mount
27 nC
N-Channel
125 mOhm
4 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
20 A
10 V
Infineon Technologies
10-PowerSOP Module
20 V
1747 pF
MOSFET (Metal Oxide)
Surface Mount
N-Channel
90 mOhm
4.5 V
-55 °C
150 °C
PG-HDSOP-10-1
600 V
42 nC
33 A
227 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.32
10$ 5.67
100$ 4.18
500$ 3.72
Digi-Reel® 1$ 8.32
10$ 5.67
100$ 4.18
500$ 3.72
Tape & Reel (TR) 1700$ 3.72
NewarkEach (Supplied on Cut Tape) 1$ 7.91
10$ 5.75
25$ 5.24
50$ 4.74
100$ 4.24
250$ 3.98
500$ 3.72

Description

General part information

IPDD60 Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources