IPDD60R050G7XTMA1
ActiveCOOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 50 MOHM; HIGHEST PERFORMANCE
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IPDD60R050G7XTMA1
ActiveCOOLMOS™ G7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 50 MOHM; HIGHEST PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPDD60R050G7XTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 47 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 68 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2670 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 10-PowerSOP Module |
| Power Dissipation (Max) | 278 W |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | PG-HDSOP-10-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IPDD60 Series
| Part | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Power Dissipation (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10-PowerSOP Module | 20 V | 2102 pF | MOSFET (Metal Oxide) | 266 W | Surface Mount | 51 nC | N-Channel | 75 mOhm | 4.5 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | |||||
Infineon Technologies | 10-PowerSOP Module | 20 V | 1016 pF | MOSFET (Metal Oxide) | 137 W | Surface Mount | N-Channel | 4.5 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 23 nC | 19 A | |||||
Infineon Technologies | 10-PowerSOP Module | 20 V | 1199 pF | MOSFET (Metal Oxide) | Surface Mount | 28 nC | N-Channel | 145 mOhm | 4.5 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 24 A | |||||
Infineon Technologies | 10-PowerSOP Module | 20 V | 2724 pF | MOSFET (Metal Oxide) | 329 W | Surface Mount | N-Channel | 55 mOhm | 4.5 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 52 A | |||||
Infineon Technologies | 10-PowerSOP Module | 20 V | 902 pF | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 4 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 23 nC | 16 A | 95 W | 10 V | 150 mOhm | |||
Infineon Technologies | 10-PowerSOP Module | 20 V | 2670 pF | MOSFET (Metal Oxide) | 278 W | Surface Mount | 68 nC | N-Channel | 50 mOhm | 4 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 47 A | 10 V | |||
Infineon Technologies | 10-PowerSOP Module | 20 V | MOSFET (Metal Oxide) | 379 W | Surface Mount | N-Channel | 45 mOhm | 4.5 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 79 nC | 61 A | |||||
Infineon Technologies | 10-PowerSOP Module | 20 V | 1320 pF | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 4 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 34 nC | 23 A | 139 W | 10 V | 102 mOhm | |||
Infineon Technologies | 10-PowerSOP Module | 20 V | 1080 pF | MOSFET (Metal Oxide) | 120 W | Surface Mount | 27 nC | N-Channel | 125 mOhm | 4 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 20 A | 10 V | |||
Infineon Technologies | 10-PowerSOP Module | 20 V | 1747 pF | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 90 mOhm | 4.5 V | -55 °C | 150 °C | PG-HDSOP-10-1 | 600 V | 42 nC | 33 A | 227 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 9.78 | |
| 10 | $ 6.74 | |||
| 100 | $ 5.01 | |||
| 500 | $ 4.61 | |||
| Digi-Reel® | 1 | $ 9.78 | ||
| 10 | $ 6.74 | |||
| 100 | $ 5.01 | |||
| 500 | $ 4.61 | |||
| Tape & Reel (TR) | 1700 | $ 4.61 | ||
Description
General part information
IPDD60 Series
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology600 V CoolMOS™ G7 superjunction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Documents
Technical documentation and resources