IPDD60R090CFD7XTMA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 90 MOHM;

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IPDD60R090CFD7XTMA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DDPAK PACKAGE; 90 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPDD60R090CFD7XTMA1

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1747 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-PowerSOP Module
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	PG-HDSOP-10-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPDD60 Series

Part	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPDD60R075CFD7XTMA1	10-PowerSOP Module	20 V	2102 pF	MOSFET (Metal Oxide)	266 W	Surface Mount	51 nC	N-Channel	75 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V
Infineon Technologies IPDD60R170CFD7XTMA1	10-PowerSOP Module	20 V	1016 pF	MOSFET (Metal Oxide)	137 W	Surface Mount		N-Channel		4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	23 nC	19 A
Infineon Technologies IPDD60R145CFD7XTMA1	10-PowerSOP Module	20 V	1199 pF	MOSFET (Metal Oxide)		Surface Mount	28 nC	N-Channel	145 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		24 A
Infineon Technologies IPDD60R055CFD7XTMA1	10-PowerSOP Module	20 V	2724 pF	MOSFET (Metal Oxide)	329 W	Surface Mount		N-Channel	55 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		52 A
Infineon Technologies IPDD60R150G7XTMA1	10-PowerSOP Module	20 V	902 pF	MOSFET (Metal Oxide)		Surface Mount		N-Channel		4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	23 nC	16 A	95 W	10 V	150 mOhm
Infineon Technologies IPDD60R050G7XTMA1	10-PowerSOP Module	20 V	2670 pF	MOSFET (Metal Oxide)	278 W	Surface Mount	68 nC	N-Channel	50 mOhm	4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		47 A		10 V
Infineon Technologies IPDD60R045CFD7XTMA1	10-PowerSOP Module	20 V		MOSFET (Metal Oxide)	379 W	Surface Mount		N-Channel	45 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	79 nC	61 A
Infineon Technologies IPDD60R102G7XTMA1	10-PowerSOP Module	20 V	1320 pF	MOSFET (Metal Oxide)		Surface Mount		N-Channel		4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	34 nC	23 A	139 W	10 V	102 mOhm
Infineon Technologies IPDD60R125G7XTMA1	10-PowerSOP Module	20 V	1080 pF	MOSFET (Metal Oxide)	120 W	Surface Mount	27 nC	N-Channel	125 mOhm	4 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V		20 A		10 V
Infineon Technologies IPDD60R090CFD7XTMA1	10-PowerSOP Module	20 V	1747 pF	MOSFET (Metal Oxide)		Surface Mount		N-Channel	90 mOhm	4.5 V	-55 °C	150 °C	PG-HDSOP-10-1	600 V	42 nC	33 A	227 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.65
		10	$ 3.78
		100	$ 2.72
		500	$ 2.26
	Digi-Reel®	1	$ 5.65
		10	$ 3.78
		100	$ 2.72
		500	$ 2.26
	Tape & Reel (TR)	1700	$ 2.23

Description

General part information

IPDD60 Series

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources