STGP10M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS
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STGP10M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGP10M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Gate Charge | 28 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 115 W |
| Reverse Recovery Time (trr) | 96 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 270 µJ, 120 µJ |
| Td (on/off) @ 25°C | 19 ns, 91 ns |
| Test Condition | 400 V, 22 Ohm, 15 V, 10 A |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP10M65DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources