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STGP10M65DF2

STGP10M65DF2

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS

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STGP10M65DF2

STGP10M65DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS

Find alt

Description

General part information

STGP10 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP10M65DF2
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)40 A
Gate Charge28 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power - Max115 W
Reverse Recovery Time (trr)96 ns
Switching Energy (Off)270 µJ
Switching Energy (On)120 µJ
Td (off) @ 25°C91 ns
Td (on) @ 25°C19 ns
Test Condition Current10 A
Test Condition Resistance22 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

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CAD

3D models and CAD resources for this part