
STGP10M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS

STGP10M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS
Description
General part information
STGP10 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP10M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Gate Charge | 28 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power - Max | 115 W |
| Reverse Recovery Time (trr) | 96 ns |
| Switching Energy (Off) | 270 µJ |
| Switching Energy (On) | 120 µJ |
| Td (off) @ 25°C | 91 ns |
| Td (on) @ 25°C | 19 ns |
| Test Condition Current | 10 A |
| Test Condition Resistance | 22 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part