STGP10M65DF2 Series

16 A, 600 V low drop IGBT with soft and fast recovery diode

Catalog

16 A, 600 V low drop IGBT with soft and fast recovery diode

Part	Switching Energy	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Power - Max [Max]	Package / Case	IGBT Type	Reverse Recovery Time (trr)	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Mounting Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics STGP10M65DF2	120 µJ 270 µJ	40 A	19 ns 91 ns	115 W	TO-220-3	Trench Field Stop	96 ns	10 A 15 V 22 Ohm 400 V	-55 °C	175 ░C	28 nC	Through Hole	20 A	650 V	2 V	TO-220
STMicroelectronics STGP10NC60KD	55 µJ 85 µJ	30 A	17 ns 72 ns	65 W	TO-220-3		22 ns	5 A 10 Ohm 15 V 390 V	-55 °C	150 °C	19 nC	Through Hole	20 A		2.5 V	TO-220	600 V
STMicroelectronics STGP10NB60SD	5 mJ 600 µJ	80 A	1.2 µs 700 ns	80 W	TO-220-3		37 ns	10 A 15 V 480 V 1000 Ohm	-55 °C	150 °C	33 nC	Through Hole			1.75 V	TO-220	600 V	29 A

Catalog

16 A, 600 V low drop IGBT with soft and fast recovery diode

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.