STGP10NC60KD

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STMicroelectronics

IGBT SINGLE TRANSISTOR, 600 V, 20 A, 65 W, 2.2V, TO-220

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DocumentsProduct Change Notice EN Technical Data Sheet EN +11

STGP10NC60KD

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STMicroelectronics

IGBT SINGLE TRANSISTOR, 600 V, 20 A, 65 W, 2.2V, TO-220

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DocumentsProduct Change Notice EN Technical Data Sheet EN +11

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGP10NC60KD

Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	19 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	65 W
Reverse Recovery Time (trr)	22 ns
Supplier Device Package	TO-220
Switching Energy	85 µJ, 55 µJ
Td (on/off) @ 25°C	72 ns, 17 ns
Test Condition	15 V, 10 Ohm, 5 A, 390 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGP10M65DF2 Series

16 A, 600 V low drop IGBT with soft and fast recovery diode

Part	Switching Energy	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Power - Max [Max]	Package / Case	IGBT Type	Reverse Recovery Time (trr)	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Mounting Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics STGP10M65DF2	120 µJ 270 µJ	40 A	19 ns 91 ns	115 W	TO-220-3	Trench Field Stop	96 ns	10 A 15 V 22 Ohm 400 V	-55 °C	175 ░C	28 nC	Through Hole	20 A	650 V	2 V	TO-220
STMicroelectronics STGP10NC60KD	55 µJ 85 µJ	30 A	17 ns 72 ns	65 W	TO-220-3		22 ns	5 A 10 Ohm 15 V 390 V	-55 °C	150 °C	19 nC	Through Hole	20 A		2.5 V	TO-220	600 V
STMicroelectronics STGP10NB60SD	5 mJ 600 µJ	80 A	1.2 µs 700 ns	80 W	TO-220-3		37 ns	10 A 15 V 480 V 1000 Ohm	-55 °C	150 °C	33 nC	Through Hole			1.75 V	TO-220	600 V	29 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.59
		50	$ 1.27
		100	$ 1.01
		500	$ 0.86
		1000	$ 0.70
		2000	$ 0.66
		5000	$ 0.62
		10000	$ 0.60
Newark	Each	1	$ 2.33
		10	$ 1.39
		100	$ 1.27
		500	$ 1.11
		1000	$ 1.06
		3000	$ 1.02
		5000	$ 1.01

Description

General part information

STGP10M65DF2 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources

STGP10NC60KD

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STGP10NC60KD

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Technical Specifications

STGP10M65DF2 Series

Pricing

Description

STGP10M65DF2 Series

Documents

Product Change Notice EN

Technical Data Sheet EN

Datasheet

DS4320

TN1225

TN1224

UM0723

TN1378

AN4544

AN4694

STGP10M65DF2 Series