Technical Specifications
Parameters and characteristics for this part
| Specification | STGP10NB60SD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 29 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 33 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 80 W |
| Reverse Recovery Time (trr) | 37 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 600 µJ, 5 mJ |
| Td (on/off) @ 25°C | 700 ns, 1.2 µs |
| Test Condition | 1000 Ohm, 15 V, 480 V, 10 A |
| Vce(on) (Max) @ Vge, Ic | 1.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.29 | |
| 50 | $ 1.84 | |||
| 100 | $ 1.51 | |||
| 500 | $ 1.28 | |||
| 1000 | $ 1.08 | |||
| 2000 | $ 1.03 | |||
| 5000 | $ 0.99 | |||
| 10000 | $ 0.96 | |||
Description
General part information
STGP10M65DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.