
DMN66D0LW-7
ObsoleteDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-3
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DMN66D0LW-7
ObsoleteDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-3
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMN66D0LW-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 115 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Power Dissipation (Max) | 200 mW |
| Rds On (Max) @ Id, Vgs | 6 Ohm |
| Supplier Device Package | SOT-323 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMN66D0LDWQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Documents
Technical documentation and resources