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DMN66D0LT-7 - SOT-523

DMN66D0LT-7

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

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DMN66D0LT-7 - SOT-523

DMN66D0LT-7

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN66D0LT-7
Current - Continuous Drain (Id) @ 25°C115 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds23 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-523
Power Dissipation (Max)200 mW
Rds On (Max) @ Id, Vgs5 Ohm
Supplier Device PackageSOT-523
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.39
100$ 0.27
500$ 0.21
1000$ 0.17
Digi-Reel® 1$ 0.45
10$ 0.39
100$ 0.27
500$ 0.21
1000$ 0.17
Tape & Reel (TR) 3000$ 0.13

Description

General part information

DMN66D0LDWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.