DMN66D0LDWQ Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Configuration	Grade	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Vgs (Max)	Power Dissipation (Max)
Diodes Inc DMN66D0LDWQ-13	Surface Mount	2 N-Channel (Dual)	Automotive	60 V	217 mA	2 V	MOSFET (Metal Oxide)	SOT-363	-55 °C	150 °C	AEC-Q101	6-TSSOP SC-88 SOT-363	29.3 pF	6 Ohm
Diodes Inc DMN66D0LDW-7	Surface Mount	2 N-Channel (Dual)	Automotive	60 V	115 mA	2 V	MOSFET (Metal Oxide)	SOT-363	-55 °C	150 °C	AEC-Q101	6-TSSOP SC-88 SOT-363	23 pF	6 Ohm	250 mW
Diodes Inc DMN66D0LW-7	Surface Mount			60 V	115 mA	2 V	MOSFET (Metal Oxide)	SOT-323	-55 °C	150 °C		SC-70 SOT-323	23 pF	6 Ohm		10 V	5 V	N-Channel	20 V	200 mW
Diodes Inc DMN66D0LT-7	Surface Mount			60 V	115 mA	2 V	MOSFET (Metal Oxide)	SOT-523	-55 °C	150 °C		SOT-523	23 pF	5 Ohm		10 V	5 V	N-Channel	20 V	200 mW

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMN66D0LDWQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.