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DMN66D0LDWQ-13 - SOT 363

DMN66D0LDWQ-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN66D0LDWQ-13 - SOT 363

DMN66D0LDWQ-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN66D0LDWQ-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C217 mA
Drain to Source Voltage (Vdss)60 V
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds29.3 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageSOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.05
30000$ 0.05
50000$ 0.04
100000$ 0.04
250000$ 0.04

Description

General part information

DMN66D0LDWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.