IPB60R280CFD7ATMA1

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Infineon Technologies

MOSFET N-CH 600V 9A TO263-3-2

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LTB

Infineon Technologies

MOSFET N-CH 600V 9A TO263-3-2

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R280CFD7ATMA1

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	807 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4.5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [x]
Infineon Technologies IPB60R280C6ATMA1	600 V	13.8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	3.5 V	280 mOhm	-55 °C	150 °C	20 V	104 W	MOSFET (Metal Oxide)	43 nC	950 pF
Infineon Technologies IPB60R280P7ATMA1	600 V	12 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	4 V	280 mOhm	-55 °C	150 °C	20 V	53 W	MOSFET (Metal Oxide)			18 nC
Infineon Technologies IPB60R280CFD7ATMA1	600 V	9 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V		280 mOhm	-55 °C	150 °C	20 V	51 W	MOSFET (Metal Oxide)			18 nC	807 pF	PG-TO263-3-2	4.5 V
Infineon Technologies IPB60R280P6ATMA1	600 V	13.8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	4.5 V	280 mOhm	-55 °C	150 °C	20 V	104 W	MOSFET (Metal Oxide)				1190 pF			25.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 9A (Tc) 51W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources