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IPB60R280P6ATMA1 - PG-TO263-3

IPB60R280P6ATMA1

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Infineon Technologies

MOSFET N-CH 600V 13.8A D2PAK

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IPB60R280P6ATMA1 - PG-TO263-3

IPB60R280P6ATMA1

Active
Infineon Technologies

MOSFET N-CH 600V 13.8A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB60R280P6ATMA1
Current - Continuous Drain (Id) @ 25°C13.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]25.5 nC
Input Capacitance (Ciss) (Max) @ Vds1190 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs280 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.24
10$ 2.11
100$ 1.47
500$ 1.19
Digi-Reel® 1$ 3.24
10$ 2.11
100$ 1.47
500$ 1.19
Tape & Reel (TR) 1000$ 1.05

Description

General part information

IPB60R280 Series

N-Channel 600 V 13.8A (Tc) 104W (Tc) Surface Mount PG-TO263-3

Documents

Technical documentation and resources