IPB60R280P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 280 MOHM;

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Search across all available documentation for this part.

Documents600V CoolMOS™ P7 Brief Technical Data Sheet EN

IPB60R280P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 280 MOHM;

Deep-Dive with AI

Documents600V CoolMOS™ P7 Brief Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R280P7ATMA1

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	53 W
Rds On (Max) @ Id, Vgs	280 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB60R280 Series

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [x]
Infineon Technologies IPB60R280C6ATMA1	600 V	13.8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	3.5 V	280 mOhm	-55 °C	150 °C	20 V	104 W	MOSFET (Metal Oxide)	43 nC	950 pF
Infineon Technologies IPB60R280P7ATMA1	600 V	12 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	4 V	280 mOhm	-55 °C	150 °C	20 V	53 W	MOSFET (Metal Oxide)			18 nC
Infineon Technologies IPB60R280CFD7ATMA1	600 V	9 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V		280 mOhm	-55 °C	150 °C	20 V	51 W	MOSFET (Metal Oxide)			18 nC	807 pF	PG-TO263-3-2	4.5 V
Infineon Technologies IPB60R280P6ATMA1	600 V	13.8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	4.5 V	280 mOhm	-55 °C	150 °C	20 V	104 W	MOSFET (Metal Oxide)				1190 pF			25.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1000	$ 0.80
		2000	$ 0.77
Digikey	Cut Tape (CT)	1	$ 2.60
		10	$ 1.68
		100	$ 1.15
		500	$ 0.93
	Digi-Reel®	1	$ 2.60
		10	$ 1.68
		100	$ 1.15
		500	$ 0.93
	Tape & Reel (TR)	1000	$ 0.85
		2000	$ 0.79
		3000	$ 0.78
Newark	Each (Supplied on Cut Tape)	1	$ 2.38
		10	$ 1.59
		25	$ 1.45
		50	$ 1.29
		100	$ 1.14
		250	$ 1.03
		500	$ 0.92

Description

General part information

IPB60R280 Series

The600V CoolMOS™ P7superjunction MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources

600V CoolMOS™ P7 Brief

Datasheet

Technical Data Sheet EN

Datasheet