IPB60R280 Series

Catalog

TRANS MOSFET N-CH 600V 13.8A 3-PIN(2+TAB) D2PAK T/R

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [x]
Infineon Technologies IPB60R280C6ATMA1	600 V	13.8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	3.5 V	280 mOhm	-55 °C	150 °C	20 V	104 W	MOSFET (Metal Oxide)	43 nC	950 pF
Infineon Technologies IPB60R280P7ATMA1	600 V	12 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	4 V	280 mOhm	-55 °C	150 °C	20 V	53 W	MOSFET (Metal Oxide)			18 nC
Infineon Technologies IPB60R280CFD7ATMA1	600 V	9 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V		280 mOhm	-55 °C	150 °C	20 V	51 W	MOSFET (Metal Oxide)			18 nC	807 pF	PG-TO263-3-2	4.5 V
Infineon Technologies IPB60R280P6ATMA1	600 V	13.8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	10 V	4.5 V	280 mOhm	-55 °C	150 °C	20 V	104 W	MOSFET (Metal Oxide)				1190 pF			25.5 nC