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TSM085P03CV RGG - MFG_8-PowerWDFN

TSM085P03CV RGG

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Taiwan Semiconductor Corporation

MOSFET P-CH 30V 64A 8PDFN

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TSM085P03CV RGG - MFG_8-PowerWDFN

TSM085P03CV RGG

Active
Taiwan Semiconductor Corporation

MOSFET P-CH 30V 64A 8PDFN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM085P03CV RGG
Current - Continuous Drain (Id) @ 25°C64 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max) [Max]50 W
Supplier Device Package8-PDFN (3.1x3.1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.90
10$ 0.78
100$ 0.54
500$ 0.45
1000$ 0.38
2000$ 0.34
Digi-Reel® 1$ 0.90
10$ 0.78
100$ 0.54
500$ 0.45
1000$ 0.38
2000$ 0.34
Tape & Reel (TR) 5000$ 0.32
10000$ 0.30
25000$ 0.30

Description

General part information

TSM085 Series

P-Channel 30 V 64A (Tc) 50W (Tc) Surface Mount 8-PDFN (3.1x3.1)

Documents

Technical documentation and resources

No documents available