TSM085 Series

Catalog

MOSFET N-CH 30V 52A 8PDFN

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Package / Case [y]	Package / Case [x]
Taiwan Semiconductor Corporation TSM085N03PQ33 RGG	20 V	8.5 mOhm	-55 °C	150 °C	8-PDFN (3.1x3.1)	817 pF	Surface Mount	52 A	2.5 V	N-Channel	8-PowerWDFN	37 W	14.3 nC	4.5 V 10 V	30 V	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM085P03CV RGG	20 V		-55 °C	150 °C	8-PDFN (3.1x3.1)		Surface Mount	64 A	2.5 V	P-Channel	8-PowerWDFN	50 W	55 nC	4.5 V 10 V	30 V	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM085N03PQ33	20 V	8.5 mOhm	-55 °C	150 °C	8-PDFN (3.1x3.1)	817 pF	Surface Mount	13 A 52 A	2.5 V	N-Channel	8-PowerWDFN		14.3 nC	4.5 V 10 V	30 V	MOSFET (Metal Oxide)	2.3 W 37 W
Taiwan Semiconductor Corporation TSM085P03CS RLG	20 V	8.5 mOhm	-55 °C	150 °C	8-SOP	3216 pF	Surface Mount	34 A	2.5 V	P-Channel	8-SOIC	14 W	56 nC	4.5 V 10 V	30 V	MOSFET (Metal Oxide)		3.9 mm	0.154 in