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TSM085N03PQ33 RGG - MFG_8-PowerWDFN

TSM085N03PQ33 RGG

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Taiwan Semiconductor Corporation

MOSFET N-CH 30V 52A 8PDFN

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TSM085N03PQ33 RGG - MFG_8-PowerWDFN

TSM085N03PQ33 RGG

Active
Taiwan Semiconductor Corporation

MOSFET N-CH 30V 52A 8PDFN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM085N03PQ33 RGG
Current - Continuous Drain (Id) @ 25°C52 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.3 nC
Input Capacitance (Ciss) (Max) @ Vds817 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max) [Max]37 W
Rds On (Max) @ Id, Vgs8.5 mOhm
Supplier Device Package8-PDFN (3.1x3.1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.63
10$ 0.54
100$ 0.37
500$ 0.29
1000$ 0.24
2000$ 0.21
Digi-Reel® 1$ 0.63
10$ 0.54
100$ 0.37
500$ 0.29
1000$ 0.24
2000$ 0.21
Tape & Reel (TR) 5000$ 0.20
10000$ 0.19
25000$ 0.18
50000$ 0.18

Description

General part information

TSM085 Series

N-Channel 30 V 52A (Tc) 37W (Tc) Surface Mount 8-PDFN (3.1x3.1)

Documents

Technical documentation and resources