IAUC100N10S5L040ATMA1

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Infineon Technologies

INFINEON’S IAUC100N10S5L040 IS AN N-CHANNEL MOSFET, AEC QUALIFIED, LOGIC LEVEL, MSL1 260°C PEAK REFLOW, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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IAUC100N10S5L040ATMA1

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Infineon Technologies

INFINEON’S IAUC100N10S5L040 IS AN N-CHANNEL MOSFET, AEC QUALIFIED, LOGIC LEVEL, MSL1 260°C PEAK REFLOW, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC100N10S5L040ATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	PG-TDSON-8-34
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

IAUC100 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Qualification	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IAUC100N04S6L025ATMA1	2019 pF	100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	34 nC	4.5 V 10 V	40 V	PG-TDSON-8	2 V	16 V	-55 °C	175 ░C	Surface Mount	2.56 mOhm	62 W	Automotive
Infineon Technologies IAUC100N10S5L040ATMA1	5200 pF	100 A	8-PowerTDFN		MOSFET (Metal Oxide)	N-Channel		4.5 V 10 V	100 V	PG-TDSON-8-34	2 V	20 V	-55 °C	175 ░C	Surface Mount	4 mOhm			78 nC	167 W
Infineon Technologies IAUC100N04S6L014ATMA1		100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel		4.5 V 10 V	40 V	PG-TDSON-8	2 V	16 V	-55 °C	175 ░C	Surface Mount	1.4 mOhm	100 W	Automotive	65 nC
Infineon Technologies IAUC100N04S6N028ATMA1		100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	29 nC		40 V	PG-TDSON-8	3 V	20 V	-55 °C	175 ░C	Surface Mount		62 W	Automotive			2.86 mOhm
Infineon Technologies IAUC100N10S5N040ATMA1	5200 pF	100 A	8-PowerTDFN		MOSFET (Metal Oxide)	N-Channel		6 V 10 V	100 V	PG-TDSON-8-34	3.8 V	20 V	-55 °C	175 ░C	Surface Mount	4 mOhm			78 nC	167 W
Infineon Technologies IAUC100N04S6N022ATMA1	2421 pF	100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel			40 V	PG-TDSON-8	3 V	20 V	-55 °C	175 ░C	Surface Mount	2.26 mOhm		Automotive	39 nC	75 W
Infineon Technologies IAUC100N08S5N043ATMA1	3860 pF	100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	56 nC	6 V 10 V	80 V	PG-TDSON-8-34	3.8 V	20 V	-55 °C	175 ░C	Surface Mount	4 mOhm		Automotive		125 W
Infineon Technologies IAUC100N04S6N015ATMA1		100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	55 nC		40 V	PG-TDSON-8	3 V	20 V	-55 °C	175 ░C	Surface Mount	1.55 mOhm	100 W	Automotive				3470 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.35
		10	$ 2.19
		100	$ 1.52
		500	$ 1.24
		1000	$ 1.15
		2000	$ 1.10
	Digi-Reel®	1	$ 3.35
		10	$ 2.19
		100	$ 1.52
		500	$ 1.24
		1000	$ 1.15
		2000	$ 1.10
	Tape & Reel (TR)	5000	$ 1.10
Newark	Each (Supplied on Cut Tape)	1	$ 3.23
		10	$ 2.12
		25	$ 1.90
		50	$ 1.70
		100	$ 1.48
		250	$ 1.34
		500	$ 1.20
		1000	$ 1.06

Description

General part information

IAUC100 Series

N-Channel 100 V 100A (Tc) 167W (Tc) Surface Mount PG-TDSON-8-34

Documents

Technical documentation and resources