Zenode.ai Logo
Beta
K
IAUC100N04S6N028ATMA1 - INFINEON IAUC120N04S6L012ATMA1

IAUC100N04S6N028ATMA1

Active
Infineon Technologies

INFINEON’S IAUC100N04S6N028 IS A HIGH-EFFICIENCY POWER MOSFET WITH LOW RDS(ON) AND FAST SWITCHING. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Deep-Dive with AI

Search across all available documentation for this part.

IAUC100N04S6N028ATMA1 - INFINEON IAUC120N04S6L012ATMA1

IAUC100N04S6N028ATMA1

Active
Infineon Technologies

INFINEON’S IAUC100N04S6N028 IS A HIGH-EFFICIENCY POWER MOSFET WITH LOW RDS(ON) AND FAST SWITCHING. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUC100N04S6N028ATMA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)40 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]62 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]2.86 mOhm
Supplier Device PackagePG-TDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

IAUC100 Series

PartInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CPackage / CaseQualificationTechnologyFET TypeGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Supplier Device PackageVgs(th) (Max) @ IdVgs (Max)Operating Temperature [Min]Operating Temperature [Max]Mounting TypeRds On (Max) @ Id, VgsPower Dissipation (Max) [Max]GradeGate Charge (Qg) (Max) @ Vgs [Max]Power Dissipation (Max)Rds On (Max) @ Id, Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies
2019 pF
100 A
8-PowerTDFN
AEC-Q101
MOSFET (Metal Oxide)
N-Channel
34 nC
4.5 V
10 V
40 V
PG-TDSON-8
2 V
16 V
-55 °C
175 ░C
Surface Mount
2.56 mOhm
62 W
Automotive
Infineon Technologies
5200 pF
100 A
8-PowerTDFN
MOSFET (Metal Oxide)
N-Channel
4.5 V
10 V
100 V
PG-TDSON-8-34
2 V
20 V
-55 °C
175 ░C
Surface Mount
4 mOhm
78 nC
167 W
Infineon Technologies
100 A
8-PowerTDFN
AEC-Q101
MOSFET (Metal Oxide)
N-Channel
4.5 V
10 V
40 V
PG-TDSON-8
2 V
16 V
-55 °C
175 ░C
Surface Mount
1.4 mOhm
100 W
Automotive
65 nC
Infineon Technologies
100 A
8-PowerTDFN
AEC-Q101
MOSFET (Metal Oxide)
N-Channel
29 nC
40 V
PG-TDSON-8
3 V
20 V
-55 °C
175 ░C
Surface Mount
62 W
Automotive
2.86 mOhm
Infineon Technologies
5200 pF
100 A
8-PowerTDFN
MOSFET (Metal Oxide)
N-Channel
6 V
10 V
100 V
PG-TDSON-8-34
3.8 V
20 V
-55 °C
175 ░C
Surface Mount
4 mOhm
78 nC
167 W
Infineon Technologies
2421 pF
100 A
8-PowerTDFN
AEC-Q101
MOSFET (Metal Oxide)
N-Channel
40 V
PG-TDSON-8
3 V
20 V
-55 °C
175 ░C
Surface Mount
2.26 mOhm
Automotive
39 nC
75 W
Infineon Technologies
3860 pF
100 A
8-PowerTDFN
AEC-Q101
MOSFET (Metal Oxide)
N-Channel
56 nC
6 V
10 V
80 V
PG-TDSON-8-34
3.8 V
20 V
-55 °C
175 ░C
Surface Mount
4 mOhm
Automotive
125 W
Infineon Technologies
100 A
8-PowerTDFN
AEC-Q101
MOSFET (Metal Oxide)
N-Channel
55 nC
40 V
PG-TDSON-8
3 V
20 V
-55 °C
175 ░C
Surface Mount
1.55 mOhm
100 W
Automotive
3470 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.63
10$ 1.03
100$ 0.69
500$ 0.54
1000$ 0.50
2000$ 0.46
Digi-Reel® 1$ 1.63
10$ 1.03
100$ 0.69
500$ 0.54
1000$ 0.50
2000$ 0.46
Tape & Reel (TR) 5000$ 0.41
10000$ 0.41
NewarkEach (Supplied on Cut Tape) 1$ 0.97
10$ 0.72
25$ 0.67
50$ 0.61
100$ 0.56
250$ 0.50
500$ 0.45
1000$ 0.40

Description

General part information

IAUC100 Series

Say goodbye to old technology and unlock new levels of performance with Infineon's latest product,IAUCN04S7N030. Discover the enhanced efficiency and reliability of our newest technology withIAUCN04S7N030

Documents

Technical documentation and resources