IAUC100 Series

Catalog

IAUC100N04S6L025 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 2.5 MΩ MAX, SSO8 (5X6), OPTIMOS™-6 FOR HIGH EFFICIENCY AND RELIABILITY.

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Qualification	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IAUC100N04S6L025ATMA1	2019 pF	100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	34 nC	4.5 V 10 V	40 V	PG-TDSON-8	2 V	16 V	-55 °C	175 ░C	Surface Mount	2.56 mOhm	62 W	Automotive
Infineon Technologies IAUC100N10S5L040ATMA1	5200 pF	100 A	8-PowerTDFN		MOSFET (Metal Oxide)	N-Channel		4.5 V 10 V	100 V	PG-TDSON-8-34	2 V	20 V	-55 °C	175 ░C	Surface Mount	4 mOhm			78 nC	167 W
Infineon Technologies IAUC100N04S6L014ATMA1		100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel		4.5 V 10 V	40 V	PG-TDSON-8	2 V	16 V	-55 °C	175 ░C	Surface Mount	1.4 mOhm	100 W	Automotive	65 nC
Infineon Technologies IAUC100N04S6N028ATMA1		100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	29 nC		40 V	PG-TDSON-8	3 V	20 V	-55 °C	175 ░C	Surface Mount		62 W	Automotive			2.86 mOhm
Infineon Technologies IAUC100N10S5N040ATMA1	5200 pF	100 A	8-PowerTDFN		MOSFET (Metal Oxide)	N-Channel		6 V 10 V	100 V	PG-TDSON-8-34	3.8 V	20 V	-55 °C	175 ░C	Surface Mount	4 mOhm			78 nC	167 W
Infineon Technologies IAUC100N04S6N022ATMA1	2421 pF	100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel			40 V	PG-TDSON-8	3 V	20 V	-55 °C	175 ░C	Surface Mount	2.26 mOhm		Automotive	39 nC	75 W
Infineon Technologies IAUC100N08S5N043ATMA1	3860 pF	100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	56 nC	6 V 10 V	80 V	PG-TDSON-8-34	3.8 V	20 V	-55 °C	175 ░C	Surface Mount	4 mOhm		Automotive		125 W
Infineon Technologies IAUC100N04S6N015ATMA1		100 A	8-PowerTDFN	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	55 nC		40 V	PG-TDSON-8	3 V	20 V	-55 °C	175 ░C	Surface Mount	1.55 mOhm	100 W	Automotive				3470 pF