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DMT10H015LFG-7 - PowerDI3333-8

DMT10H015LFG-7

Active
Diodes Inc

MOSFET, N-CH, 100V, 42A, POWERDI3333 ROHS COMPLIANT: YES

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DMT10H015LFG-7 - PowerDI3333-8

DMT10H015LFG-7

Active
Diodes Inc

MOSFET, N-CH, 100V, 42A, POWERDI3333 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT10H015LFG-7
Current - Continuous Drain (Id) @ 25°C10 A, 42 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]33.3 nC
Input Capacitance (Ciss) (Max) @ Vds1871 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)35 W, 2 W
Rds On (Max) @ Id, Vgs13.5 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.02
10$ 0.83
100$ 0.65
500$ 0.55
1000$ 0.45
Digi-Reel® 1$ 1.02
10$ 0.83
100$ 0.65
500$ 0.55
1000$ 0.45
Tape & Reel (TR) 2000$ 0.42
6000$ 0.40
10000$ 0.39
NewarkEach (Supplied on Cut Tape) 1$ 1.09

Description

General part information

DMT10H072LFDFQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.