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DMT10H025LSS-13 - Package Image for SO-8

DMT10H025LSS-13

Active
Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT10H025LSS-13 - Package Image for SO-8

DMT10H025LSS-13

Active
Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT10H025LSS-13
Current - Continuous Drain (Id) @ 25°C7.1 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22.9 nC
Input Capacitance (Ciss) (Max) @ Vds1639 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.3 W, 12.9 W
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.25
5000$ 0.23
12500$ 0.22

Description

General part information

DMT10H072LFDFQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.