DMT10H072LFV-13

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Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT10H072LFV-13

Active

Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT10H072LFV-13

Current - Continuous Drain (Id) @ 25°C	20 A, 4.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.5 nC
Input Capacitance (Ciss) (Max) @ Vds	228 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	2 W
Supplier Device Package	PowerDI3333-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

DMT10H072LFDFQ Series

100V N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Diodes Inc DMT10H072LFDF-7	266 pF	100 V	4 A	N-Channel	3 V	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	4.5 V 10 V	5.1 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V
Diodes Inc DMT10H015LPS-13	1871 pF	100 V	7.3 A 44 A	N-Channel	3.5 V	PowerDI5060-8	8-PowerTDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	16 mOhm	33.3 nC
Diodes Inc DMT10H025LSS-13	1639 pF	100 V	7.1 A	N-Channel	3 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	25 mOhm	22.9 nC	3.9 mm	0.154 in	1.3 W 12.9 W
Diodes Inc DMT10H009LSS-13	2309 pF	100 V	13 A 48 A	N-Channel	3 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9 mOhm	40.2 nC	3.9 mm	0.154 in	1.8 W
Diodes Inc DMT10H010LSS-13		100 V	11.5 A 29.5 A	N-Channel	2.8 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9.5 mOhm	71 nC	3.9 mm	0.154 in	1.4 W	3000 pF
Diodes Inc DMT10H015LFG-7	1871 pF	100 V	10 A 42 A	N-Channel	3.5 V	POWERDI3333-8	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	13.5 mOhm	33.3 nC			2 W 35 W
Diodes Inc DMT10H010LPS-13		100 V	9.4 A	N-Channel	3.5 V	PowerDI5060-8	8-PowerTDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9.5 mOhm	71 nC			1.2 W 139 W	3000 pF	98 A
Diodes Inc DMT10H015LCG-7	1871 pF	100 V	9.4 A 34 A	N-Channel	3.5 V	V-DFN3333-8	8-PowerVDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	155 °C	20 V	15 mOhm	33.3 nC			1 W
Diodes Inc DMT10H015LFG-13	1871 pF	100 V	10 A 42 A	N-Channel	3.5 V	POWERDI3333-8	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	13.5 mOhm	33.3 nC			2 W 35 W
Diodes Inc DMT10H072LFV-13	228 pF	100 V	4.7 A 20 A	N-Channel	2.8 V	PowerDI3333-8 (Type UX)	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V		4.5 nC						2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.23
		6000	$ 0.21
		9000	$ 0.20
		15000	$ 0.19
		21000	$ 0.19

Description

General part information

DMT10H072LFDFQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.