DMT10H072LFDFQ Series

100V N-Channel Enhancement Mode MOSFET

Catalog

100V N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Diodes Inc DMT10H072LFDF-7	266 pF	100 V	4 A	N-Channel	3 V	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	4.5 V 10 V	5.1 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V
Diodes Inc DMT10H015LPS-13	1871 pF	100 V	7.3 A 44 A	N-Channel	3.5 V	PowerDI5060-8	8-PowerTDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	16 mOhm	33.3 nC
Diodes Inc DMT10H025LSS-13	1639 pF	100 V	7.1 A	N-Channel	3 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	25 mOhm	22.9 nC	3.9 mm	0.154 in	1.3 W 12.9 W
Diodes Inc DMT10H009LSS-13	2309 pF	100 V	13 A 48 A	N-Channel	3 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9 mOhm	40.2 nC	3.9 mm	0.154 in	1.8 W
Diodes Inc DMT10H010LSS-13		100 V	11.5 A 29.5 A	N-Channel	2.8 V	8-SO	8-SOIC	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9.5 mOhm	71 nC	3.9 mm	0.154 in	1.4 W	3000 pF
Diodes Inc DMT10H015LFG-7	1871 pF	100 V	10 A 42 A	N-Channel	3.5 V	POWERDI3333-8	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	13.5 mOhm	33.3 nC			2 W 35 W
Diodes Inc DMT10H010LPS-13		100 V	9.4 A	N-Channel	3.5 V	PowerDI5060-8	8-PowerTDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	9.5 mOhm	71 nC			1.2 W 139 W	3000 pF	98 A
Diodes Inc DMT10H015LCG-7	1871 pF	100 V	9.4 A 34 A	N-Channel	3.5 V	V-DFN3333-8	8-PowerVDFN	4.5 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	155 °C	20 V	15 mOhm	33.3 nC			1 W
Diodes Inc DMT10H015LFG-13	1871 pF	100 V	10 A 42 A	N-Channel	3.5 V	POWERDI3333-8	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	13.5 mOhm	33.3 nC			2 W 35 W
Diodes Inc DMT10H072LFV-13	228 pF	100 V	4.7 A 20 A	N-Channel	2.8 V	PowerDI3333-8 (Type UX)	8-PowerVDFN	6 V 10 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V		4.5 nC						2 W

Catalog

100V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– Ensures On-State Losses Are Minimized

• Excellent Qgdx RDS (ON)Product (FOM)

• Advanced Technology for DC/DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product

• 100% UIS (Avalanche) Rated

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.