BSC019N06NSATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 1.95 MOHM;

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BSC019N06NSATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 1.95 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC019N06NSATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	5250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	1.95 mOhm
Supplier Device Package	PG-TDSON-8 FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.3 V

BSC019 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies BSC019N04NSGATMA1	10 V	2.5 W 125 W	8800 pF	108 nC	4 V	20 V	30 A 100 A	PG-TDSON-8-1	40 V	N-Channel	1.9 mOhm	-55 °C	150 °C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies BSC019N06NSATMA1	6 V 10 V	136 W	5250 pF		3.3 V	20 V	100 A	PG-TDSON-8 FL	60 V	N-Channel	1.95 mOhm	-55 °C	175 ░C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	77 nC
Infineon Technologies BSC019N02KSGAUMA1	2.5 V 4.5 V	2.8 W 104 W	13000 pF		1.2 V	12 V	30 A 100 A	PG-TDSON-8-1	20 V	N-Channel		-55 °C	150 °C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	85 nC	1.95 mOhm
Infineon Technologies BSC019N04LSATMA1	4.5 V 10 V	2.5 W 78 W			2 V	20 V	27 A 100 A	PG-TDSON-8-1	40 V	N-Channel	1.9 mOhm	-55 °C	175 ░C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	41 nC		2900 pF
Infineon Technologies BSC019N04LSTATMA1	4.5 V 10 V	94 W	4060 pF	57 nC	2 V	20 V	28 A 161 A		40 V	N-Channel	1.9 mOhm					MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	5000	$ 0.74
Digikey	Cut Tape (CT)	1	$ 2.51
		10	$ 2.25
		25	$ 2.13
		100	$ 1.81
		250	$ 1.70
		500	$ 1.49
		1000	$ 1.23
		2500	$ 1.15
	Digi-Reel®	1	$ 2.51
		10	$ 2.25
		25	$ 2.13
		100	$ 1.81
		250	$ 1.70
		500	$ 1.49
		1000	$ 1.23
		2500	$ 1.15
	Tape & Reel (TR)	5000	$ 1.11
Newark	Each (Supplied on Full Reel)	5000	$ 1.60

Description

General part information

BSC019 Series

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAXfeature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Documents

Technical documentation and resources