BSC019 Series

Catalog

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies BSC019N04NSGATMA1	10 V	2.5 W 125 W	8800 pF	108 nC	4 V	20 V	30 A 100 A	PG-TDSON-8-1	40 V	N-Channel	1.9 mOhm	-55 °C	150 °C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies BSC019N06NSATMA1	6 V 10 V	136 W	5250 pF		3.3 V	20 V	100 A	PG-TDSON-8 FL	60 V	N-Channel	1.95 mOhm	-55 °C	175 ░C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	77 nC
Infineon Technologies BSC019N02KSGAUMA1	2.5 V 4.5 V	2.8 W 104 W	13000 pF		1.2 V	12 V	30 A 100 A	PG-TDSON-8-1	20 V	N-Channel		-55 °C	150 °C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	85 nC	1.95 mOhm
Infineon Technologies BSC019N04LSATMA1	4.5 V 10 V	2.5 W 78 W			2 V	20 V	27 A 100 A	PG-TDSON-8-1	40 V	N-Channel	1.9 mOhm	-55 °C	175 ░C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	41 nC		2900 pF
Infineon Technologies BSC019N04LSTATMA1	4.5 V 10 V	94 W	4060 pF	57 nC	2 V	20 V	28 A 161 A		40 V	N-Channel	1.9 mOhm					MOSFET (Metal Oxide)