BSC019N04NSGATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

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BSC019N04NSGATMA1

Active

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC019N04NSGATMA1

Current - Continuous Drain (Id) @ 25°C	30 A, 100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	108 nC
Input Capacitance (Ciss) (Max) @ Vds	8800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 125 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

BSC019 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies BSC019N04NSGATMA1	10 V	2.5 W 125 W	8800 pF	108 nC	4 V	20 V	30 A 100 A	PG-TDSON-8-1	40 V	N-Channel	1.9 mOhm	-55 °C	150 °C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies BSC019N06NSATMA1	6 V 10 V	136 W	5250 pF		3.3 V	20 V	100 A	PG-TDSON-8 FL	60 V	N-Channel	1.95 mOhm	-55 °C	175 ░C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	77 nC
Infineon Technologies BSC019N02KSGAUMA1	2.5 V 4.5 V	2.8 W 104 W	13000 pF		1.2 V	12 V	30 A 100 A	PG-TDSON-8-1	20 V	N-Channel		-55 °C	150 °C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	85 nC	1.95 mOhm
Infineon Technologies BSC019N04LSATMA1	4.5 V 10 V	2.5 W 78 W			2 V	20 V	27 A 100 A	PG-TDSON-8-1	40 V	N-Channel	1.9 mOhm	-55 °C	175 ░C	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	41 nC		2900 pF
Infineon Technologies BSC019N04LSTATMA1	4.5 V 10 V	94 W	4060 pF	57 nC	2 V	20 V	28 A 161 A		40 V	N-Channel	1.9 mOhm					MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.93
		10	$ 1.23
		100	$ 0.83
		500	$ 0.66
		1000	$ 0.61
		2000	$ 0.56
	Digi-Reel®	1	$ 1.93
		10	$ 1.23
		100	$ 0.83
		500	$ 0.66
		1000	$ 0.61
		2000	$ 0.56
	Tape & Reel (TR)	5000	$ 0.52

Description

General part information

BSC019 Series

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Documents

Technical documentation and resources

No documents available