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FF200R12KS4PHOSA1 - IGBT MODULE C SERIES

FF200R12KS4PHOSA1

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Infineon Technologies

THE FF200R12KS4P IS A DUAL IGBT2 FAST MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

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FF200R12KS4PHOSA1 - IGBT MODULE C SERIES

FF200R12KS4PHOSA1

Active
Infineon Technologies

THE FF200R12KS4P IS A DUAL IGBT2 FAST MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFF200R12KS4PHOSA1
ConfigurationHalf Bridge
Current - Collector (Ic) (Max) [Max]275 A
Current - Collector Cutoff (Max) [Max]5 mA
InputStandard
Input Capacitance (Cies) @ Vce13 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]1400 W
Supplier Device PackageModule
Vce(on) (Max) @ Vge, Ic3.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 153.32
16$ 143.60
32$ 138.20

Description

General part information

FF200R12 Series

62 mm1200 V, 200 A dualIGBT modulewith fast IGBT2 and pre-applied Thermal Interface Material is the right choice for your design.

Documents

Technical documentation and resources