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FF200R12KT3EHOSA1 - IGBT MODULE C SERIES

FF200R12KT3EHOSA1

NRND
Infineon Technologies

THE FF200R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

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FF200R12KT3EHOSA1 - IGBT MODULE C SERIES

FF200R12KT3EHOSA1

NRND
Infineon Technologies

THE FF200R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFF200R12KT3EHOSA1
Configuration2 Independent
Current - Collector Cutoff (Max) [Max]5 mA
InputStandard
Input Capacitance (Cies) @ Vce14 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]1050 W
Supplier Device PackageModule
Vce(on) (Max) @ Vge, Ic2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 10$ 120.98

Description

General part information

FF200R12 Series

62 mm1200 V, 200 A Common EmitterIGBT modulewith fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200 V 62 mm dual modules (e.g.FF200R12KT3).

Documents

Technical documentation and resources

No documents available