
FF200R12KT3EHOSA1
NRNDTHE FF200R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.
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FF200R12KT3EHOSA1
NRNDTHE FF200R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.
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Technical Specifications
Parameters and characteristics for this part
| Specification | FF200R12KT3EHOSA1 |
|---|---|
| Configuration | 2 Independent |
| Current - Collector Cutoff (Max) [Max] | 5 mA |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 14 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | False |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 1050 W |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.15 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 10 | $ 120.98 | |
Description
General part information
FF200R12 Series
62 mm1200 V, 200 A Common EmitterIGBT modulewith fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200 V 62 mm dual modules (e.g.FF200R12KT3).
Documents
Technical documentation and resources
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