FF200R12KE4HOSA1

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Infineon Technologies

THE FF200R12KE4 IS A DUAL IGBT4 - E4 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

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Infineon Technologies

THE FF200R12KE4 IS A DUAL IGBT4 - E4 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

Technical Specifications

Parameters and characteristics for this part

Specification	FF200R12KE4HOSA1

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	240 A
Current - Collector Cutoff (Max) [Max]	5 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	14 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	1100 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector (Ic) (Max) [Max]	Configuration	Package / Case	Power - Max [Max]	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	IGBT Type	Mounting Type	Input	Operating Temperature [Max]	Operating Temperature [Min]
Infineon Technologies FF200R12KE4HOSA1	240 A	Half Bridge	Module	1100 W	14 nF	1200 V	5 mA	2.15 V	Module	Trench Field Stop	Chassis Mount	Standard	150 °C	-40 °C
Infineon Technologies FF200R12KT4HOSA1	320 A	Half Bridge	Module	1100 W	14 nF	1200 V	5 mA	2.15 V	Module	Trench Field Stop	Chassis Mount	Standard	150 °C	-40 °C
Infineon Technologies FF200R12KE3B2HOSA1	295 A	Half Bridge	Module	1050 W	14 nF	1200 V	5 mA	2.15 V	Module		Chassis Mount	Standard	125 °C	-40 °C
Infineon Technologies FF200R12KT3EHOSA1		2 Independent	Module	1050 W	14 nF	1200 V	5 mA	2.15 V	Module		Chassis Mount	Standard	125 °C	-40 °C
Infineon Technologies FF200R12KS4HOSA1	275 A	2 Independent	Module	1400 W	13 nF	1200 V	5 mA	3.7 V	Module		Chassis Mount	Standard	125 °C	-40 °C
Infineon Technologies FF200R12KS4PHOSA1	275 A	Half Bridge	Module	1400 W	13 nF	1200 V	5 mA	3.7 V	Module		Chassis Mount	Standard	125 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

62 mm1200 V, 200 A dualIGBT modulewith TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available withThermal Interface Material.

Technical documentation and resources