FF200R12 Series

Catalog

THE FF200R12KE4 IS A DUAL IGBT4 - E4 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 200 A.

Part	Current - Collector (Ic) (Max) [Max]	Configuration	Package / Case	Power - Max [Max]	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	IGBT Type	Mounting Type	Input	Operating Temperature [Max]	Operating Temperature [Min]
Infineon Technologies FF200R12KE4HOSA1	240 A	Half Bridge	Module	1100 W	14 nF	1200 V	5 mA	2.15 V	Module	Trench Field Stop	Chassis Mount	Standard	150 °C	-40 °C
Infineon Technologies FF200R12KT4HOSA1	320 A	Half Bridge	Module	1100 W	14 nF	1200 V	5 mA	2.15 V	Module	Trench Field Stop	Chassis Mount	Standard	150 °C	-40 °C
Infineon Technologies FF200R12KE3B2HOSA1	295 A	Half Bridge	Module	1050 W	14 nF	1200 V	5 mA	2.15 V	Module		Chassis Mount	Standard	125 °C	-40 °C
Infineon Technologies FF200R12KT3EHOSA1		2 Independent	Module	1050 W	14 nF	1200 V	5 mA	2.15 V	Module		Chassis Mount	Standard	125 °C	-40 °C
Infineon Technologies FF200R12KS4HOSA1	275 A	2 Independent	Module	1400 W	13 nF	1200 V	5 mA	3.7 V	Module		Chassis Mount	Standard	125 °C	-40 °C
Infineon Technologies FF200R12KS4PHOSA1	275 A	Half Bridge	Module	1400 W	13 nF	1200 V	5 mA	3.7 V	Module		Chassis Mount	Standard	125 °C	-40 °C