IPP65R190CFDXKSA2

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Infineon Technologies

MOSFET, N-CH, 650V, 17.5A, TO-220 ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 650V, 17.5A, TO-220 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R190CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	17.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	151 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)	Qualification	Grade
Infineon Technologies IPP65R190CFDXKSA2	10 V	190 mOhm	650 V	20 V	68 nC	TO-220-3	MOSFET (Metal Oxide)	17.5 A	Through Hole	1850 pF	PG-TO220-3	-55 °C	150 °C	N-Channel	4.5 V	151 W
Infineon Technologies IPP65R190C6XKSA1	10 V	190 mOhm	650 V	20 V		TO-220-3	MOSFET (Metal Oxide)	20.2 A	Through Hole	1620 pF	PG-TO220-3	-55 °C	150 °C	N-Channel	3.5 V	151 W	73 nC
Infineon Technologies IPP65R190CFD7AAKSA1		190 mOhm	650 V	20 V	28 nC	TO-220-3	MOSFET (Metal Oxide)	14 A	Through Hole	1291 pF	PG-TO220-3	-40 °C	150 °C	N-Channel	4.5 V			77 W	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 17.5A (Tc) 151W (Tc) Through Hole PG-TO220-3

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