IPP65R190 Series

Catalog

MOSFET, N-CH, 650V, 17.5A, TO-220 ROHS COMPLIANT: YES

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)	Qualification	Grade
Infineon Technologies IPP65R190CFDXKSA2	10 V	190 mOhm	650 V	20 V	68 nC	TO-220-3	MOSFET (Metal Oxide)	17.5 A	Through Hole	1850 pF	PG-TO220-3	-55 °C	150 °C	N-Channel	4.5 V	151 W
Infineon Technologies IPP65R190C6XKSA1	10 V	190 mOhm	650 V	20 V		TO-220-3	MOSFET (Metal Oxide)	20.2 A	Through Hole	1620 pF	PG-TO220-3	-55 °C	150 °C	N-Channel	3.5 V	151 W	73 nC
Infineon Technologies IPP65R190CFD7AAKSA1		190 mOhm	650 V	20 V	28 nC	TO-220-3	MOSFET (Metal Oxide)	14 A	Through Hole	1291 pF	PG-TO220-3	-40 °C	150 °C	N-Channel	4.5 V			77 W	AEC-Q101	Automotive