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IPP65R190C6XKSA1 - TO-220-3

IPP65R190C6XKSA1

NRND
Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 190 MOHM;

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IPP65R190C6XKSA1 - TO-220-3

IPP65R190C6XKSA1

NRND
Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 190 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R190C6XKSA1
Current - Continuous Drain (Id) @ 25°C20.2 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]73 nC
Input Capacitance (Ciss) (Max) @ Vds1620 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]151 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 500$ 1.73

Description

General part information

IPP65R190 Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Documents

Technical documentation and resources

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